The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals-Reference-Cited by-同舟云学术

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The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals

Published:2019-09-18 Issue: Volume: Page:207-211
ISSN:1680-0737
Container-title:IFMBE Proceedings
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Author:

Sprincean V.,Vatavu E.,Dmitroglo L.,Untila D.,Caraman I.,Caraman M.

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-31866-6_42

Reference25 articles.

1. Okamoto, T., Konagai, M., Kojima, N., et al.: Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3. J. Electron. Mater. 22, 229–232 (1993)

2. Khanfar, H.K., Qasrawi, A.F., Zakarneh, Y.A., et al.: Design and applications of Yb/Ga2Se3/C Schottky barriers. IEEE Sens. J. 17, 4429–4434 (2017)

3. Dai, Z.R., Ohuchi, F.S.: Vacancy ordering of Ga2Se3 at GaSe/GaAs(100) interface. Appl. Phys. Lett. 73, 966–968 (1998)

4. Okamoto, T., Kojima, N., Yamada, A., et al.: Optical anisotropy of vacancy-ordered Ga2Se3 grown by molecular beam epitaxy. Jpn. J. Appl. Phys. 31, L143 (1992)

5. Nakayama, T., Ishikawa, M.: Bonding and optical anisotropy of vacancy-ordered Ga2Se3. J. Phys. Soc. Jpn. 66, 3887–3892 (1997)

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