Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors-Reference-Cited by-同舟云学术

Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors

Published:2023-11-29 Issue: Volume: Page:78-90
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Scognamillo Ciro,Catalano Antonio Pio,Müller Markus,Schröter Michael,d’Alessandro Vincenzo

Publisher

Springer Nature Switzerland

Link

https://link.springer.com/content/pdf/10.1007/978-3-031-48711-8_10

Reference26 articles.

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3. d’Alessandro, V., et al.: Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs. In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 137–140. Austin, TX, USA (2010)

4. d’Alessandro, V., Sasso, G., Rinaldi, N., Aufinger, K.: Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe: C HBTs. IEEE Trans. Electron Devices 61(10), 3386–3394 (2014)

5. La Spina, L., d’Alessandro, V., Russo, S., Rinaldi, N., Nanver, L.K.: Influence of concurrent electrothermal and avalanche effects on the safe operating area of multifinger bipolar transistors. IEEE Trans. Electron Devices 56(3), 483–491 (2009)