Author:
Choi Kiyong,Choi Duck Kyun,Lee Dong-Yeon,Shim Jaesool,Ko Sungho,Park Jae Hong
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference17 articles.
1. K. Choi, Improvement of resonance properties of PZT cantilever using SiC wafer. Ph.D. Thesis, Hanyang University Press, Seoul, Korea, 2007, pp. 64–90
2. P.M. Sarro, Silicon carbide as a new MEMS technology. Sens. Actuators A 82, 210–218 (2000)
3. A. Tasaka, K. Takahashi, K. Tanaka, K. Shimizu, K. Mori, S. Tada, W. Shimizu, T. Abe, M. Inaba, Z. Ogumi, T. Tojo, Plasma etching of SiC surface using NF3. J. Vac. Sci. Technol. A 20, 1254–1260 (2002)
4. N. Susumu, A. Sadao, Chemical etching of thermally-grown SiO2 films on SiC studied by spectroscopic ellipsometry. Jpn. J. Appl. Phys. 33, 1833–1834 (1994)
5. J.S. Shor, A.D. Kurtz, I. Grimberg, B.Z. Weiss, R.M. Osgood, Dopant-selective etch stops in 6H and 3C SiC. J. Appl. Phys. 81, 1546–1551 (1997)