The structure and luminescence of boron nitride doped with Ce ions-Reference-Cited by-同舟云学术

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The structure and luminescence of boron nitride doped with Ce ions

Published:2018-08-20 Issue:9 Volume:124 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Jung Jae-Yong,Baek Youn-Kyung,Lee Jung-Goo,Kim Yang-Do,Cho Shin-Ho,Kim Young-Kuk

Funder

Korea Institute of Materials Science

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-018-2054-y/fulltext.html

Reference40 articles.

1. D.E. Kuznetsova, G.A. Dosovitskiy, A.E. Dosovistskiy, Transparency and microstructure of YAG:Ce phosphor particles. Opt. Mater. 66, 547–551 (2017)

2. S.A. Khan, N.Z. Khan, Z. Hao, W.W. Ji, H. Abadikhah, L. Hao, X. Xu, S. Agathopoulos, Influence of substitution of Al–O for Si–N on improvement of photoluminescence properties and thermal stability of Ba2Si5N8:Eu2+ red emitting phosphors. J. Alloys Compd. 730, 249–254 (2018)

3. J. Chen, Y. Liu, L. Mei, H. Liu, M. Fang, Z. Huang, Crystal structure and temperature-dependent luminescence characteristics of KMg4(PO4)3: Eu2+ phosphor for white light-emitting diodes. Sci. Rep. 5, 9673 (2015)

4. R. Xie, Y.Q. Li, N. Hirosaki, H. Yamamoto, Nitride Phosphors and Solid-State Lighting. (CRC Press, Boca Raton, 2016)

5. A. Steckl, R. Birkhahn, Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy. Appl. Phys. Lett. 73, 1700–1702 (1998)

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