Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature-Reference-Cited by-同舟云学术

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Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

Published:2018-01-09 Issue:2 Volume:124 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Ismail Muhammad,Ullah Rehmat,Hussain Riaz,Talib Ijaz,Rana Anwar Manzoor,Hussain Muhammad,Mahmood Khalid,Hussain Fayyaz,Ahmed Ejaz,Bao Dinghua

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-017-1512-2/fulltext.html

Reference32 articles.

1. R. Waser, M. Aono, Nat. Mater 6, 833 (2007)

2. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater 21, 2632 (2009)

3. A. Sawa, Mater. Today 11, 28 (2008)

4. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, IEEE Trans. Elec. Dev 56, 186–192 (2009)

5. S.B. Lee, J.S. Lee, S.H. Chang, H.K. Yoo, B.S. Kang, M.-J. Lee, C.J. Kim, T.W. Noh, Appl. Phys. Lett. 98, 033502 (2011)

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