The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films-Reference-Cited by-同舟云学术

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The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films

Published:2005-02 Issue:2 Volume:80 Page:267-269
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Campomanes R.R.,Vilcarromero J.,Galzerani J.C.,Dias da Silva J.H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-004-2557-6.pdf

Reference12 articles.

1. F.W. Smith, H.Q. Le, V. Diadiuk, M.A. Hollis, A.R. Calawa, S. Gupta, M. Frankel, D.R. Dykaar, G.A. Mourou, T.Y. Hsiang: Appl. Phys. Lett. 54, 890 (1989)

2. M. Kaminsha, Z. Liliental-Weber, E.R. Weber, T. George, J.B. Kortright, F.W. Smith, B.-Y. Tsaur, A.R. Calawa: Appl. Phys. Lett. 54, 1881 (1989)

3. A. Claverie, Z. Liliental-Weber: Philos. Mag. A 65, 1003 (1992)

4. S. Ruvimov, Ch. Dicker, J. Washburn, Z. Liliental-Weber: Appl. Phys. Lett. 72, 226 (1998)

5. S.H. Baker, M.I. Mansor, S.J. Gurman, S.C. Bayliss, E.A. Davis: J. Non-Cryst. Solids 144, 63 (1992)

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