Studies on improved hole injection into N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine hole transport layer in the device by thermal annealing of indium tin oxide anode-Reference-Cited by-同舟云学术

Studies on improved hole injection into N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine hole transport layer in the device by thermal annealing of indium tin oxide anode

Published:2017-02-18 Issue:3 Volume:123 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Dasi Gnyaneshwar,Asokan K.,Thangaraju Kuppusamy

Funder

DST SERB

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-017-0778-8.pdf

Reference48 articles.

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