Exploring the spectroscopic and I‑V‑T characteristics advancements of cadmium zinc tungsten phosphate diode

Abstract

AbstractThis research accomplished the growth of cadmium zinc tungsten phosphate (CZWP) thin films on both glass and p-Si substrates, employing the sol–gel spin coating method. The sol–gel technique offers a versatile and controlled approach for fabricating nanomaterials with tailored properties. The structural and morphological analyses, conducted through XRD and FE-SEM, provided comprehensive insights into the nature of the films. The optical properties, absorbance behavior, energy gap, refractive indices, dielectric, conductivity, and electronegativity, underwent meticulous examination through UV–Vis spectroscopy. The X-ray diffraction analysis of the zinc cadmium tungsten phosphate diode reveals diffraction lines indicative of a nanostructure featuring a monoclinic-phase Zn2P2O7 and Cd3P6O28. Furthermore, SEM analysis confirms a nanoporous morphology with a nanograpes-like structure in the successful crystalline structure of the cadmium zinc tungsten phosphate nanostructure. The optical absorption studies, covering a wavelength range from 190 to 1500 nm, unveiled both direct and indirect energy band gaps, measuring 4.14 and 3.77 eV, respectively. A rigorous analysis of the I-V-T characteristics for the CZNP/p-Si junction in dark mode led to the identification of key parameters, including the transport ideality factor, barrier height, and series resistance.