From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics?-Reference-Cited by-同舟云学术

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From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics?

Published:2013-08-14 Issue:1 Volume:113 Page:53-59
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Böttger Roman,Heinig Karl-Heinz,Bischoff Lothar,Liedke Bartosz,Facsko Stefan

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-013-7911-0.pdf

Reference49 articles.

1. A.V. Krasheninnikov, F. Banhart, Nat. Mater. 6, 723 (2007)

2. A.V. Krasheninnikov, K. Nordlund, J. Appl. Phys. 107(7), 071301 (2010)

3. S. Gold, K.L. Chu, C. Lu, M.A. Shannon, R.I. Masel, J. Power Sources 135, 198 (2004)

4. D. Sun, A. Riley, A. Cadby, E. Richman, S. Korlann, S. Tolbert, Nature 411, 1126 (2006)

5. N.G. Rudawski, B.L. Darby, B.R. Yates, K.S. Jones, R.G. Elliman, A.A. Volinsky, Appl. Phys. Lett. 100, 083111 (2012)

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