The epitaxial growth of zinc sulphide on silicon by forced vapour transport in hydrogen flow-Reference-Cited by-同舟云学术

The epitaxial growth of zinc sulphide on silicon by forced vapour transport in hydrogen flow

Published:1970-10 Issue:10 Volume:5 Page:891-897
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Lilley P.,Jones P. L.,Litting C. N. W.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00574861.pdf

Reference5 articles.

1. P. L. Jones, C. N. W. Litting, D. E. Mason, andV. A. Williams,Brit. J. Appl. Phys. (J. Phys. D.) Ser. 2.1 (1968) 283?290.

2. H. Schafer, ?Chemical Transport Reactions? (Academic Press, 1964).

3. R. Frerichs,Phys. Rev. 72 (1947) 594.

4. H. V. Dijk andJ. Goorissen, Proceedings of the International Conference on Crystal Growth (Boston 1966);J. Phys. Chem. Solids (G.B.) Supp. No. 1 (1967) 537?541.

5. G. A. Lang andT. Stavish,R.C.A. Rev. 24, 4 (1963) 488?498.

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