Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

Abstract

AbstractIn this study, we develop a highly sensitive visible light photodetector that utilizes a thin-film structure composed of low-cost aluminum-doped zinc oxide (AZO) and n-type silicon. The AZO thickness can be adequately controlled to fit the different wavelengths of interest for photodetectors in the visible light range using interrupted flow atomic layer deposition (ALD). This in situ aluminum doping method ensures a uniform aluminum distribution within the AZO thin films and effectively increases the internal film reflections and photoresponsivity. The Schottky interface with n-type silicon is created by degenerated AZO due to the lower Fermi level, and visible light can effectively penetrate the underlying depletion zone. Optical simulation of the high conductivity of AZO indicated that the optimal thickness was 54.6, 65.8, and 91.7 nm for devices illuminated with 450 nm blue, 525 nm green and 700 nm red light, respectively. Hall effect measurements confirmed that the AZO film can achieve a low resistivity of 5 × 10–4 Ω-cm and high carrier concentration of 3 × 1020 cm−3 at a suitable precursor ratio. Additionally, AZO films offer multifunctionality by providing optical antireflective properties and forming Schottky junctions with n-type silicon to enable photoelectric conversion. This multifunctional role of AZO was experimentally validated through electrical, optical, and optical-to-electrical experiments, which showed that the optimized device can reach an optical responsivity of approximately 10.7 AW−1 at specific visible light wavelengths. The significant photoelectrical conversion efficiency and simple thin-film structure design facilitate future applications in light intensity measurement, such as in colorimetry or fluorometry.