Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors

Author:

Sun Qi,Liao Jiajia,Peng QiangxiangORCID,Zeng Binjian,Jiang Jie,Luo Yuandong,Liao Min,Yin Lu,Zhou Yichun

Funder

National Natural Science Foundation of China

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

The Hunan Provincial Key Research and Development Plan

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

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3. R.K. Jha, P. Singh, M. Goswami et al., Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications. J. Mater. Sci. 30(16), 15224–15235 (2019)

4. S. Gerardin, A. Paccagnella, Present and future non-volatile memories for space. IEEE Trans. Nucl. Sci. 57(6), 3016–3039 (2010)

5. J.F. Scott, C. Araujo, H.B. Meadows et al., Radiation effects on ferroelectric thin-film memories: retention failure mechanisms. J. Appl. Phys. 66(3), 1444–1453 (1989)

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