Determination of poisson’s ratio using growth temperature variations of InGaN/GaN MQW
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-020-04055-6.pdf
Reference18 articles.
1. M.A. Herman, H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status, 2nd edn. (Springer, Berlin, 1996), pp. 1–453
2. J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, New York, 2003), pp. 1–494
3. E.H.C. Parker, The Technology and Physics of Molecular Beam Epitaxy (Plenum Press, New York, 1985), pp. 1–679
4. S. Strite, H. Morkoç, GaN, AlN and InN: a review. J. Vacuum Sci. Technol. B 10(4), 1237–1266 (1992)
5. S. Bloom, Band structures of GaN and AlN. J. Phys. Chem. Solids 32(9), 2027–2032 (1971)
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